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Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels

โœ Scribed by Horio, K.; Fuseya, Y.


Book ID
114535782
Publisher
IEEE
Year
1994
Tongue
English
Weight
616 KB
Volume
41
Category
Article
ISSN
0018-9383

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