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Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

โœ Scribed by Horio, K.; Fuseya, Y.; Kusuki, H.; Yanai, H.


Book ID
118015940
Publisher
IEEE
Year
1991
Tongue
English
Weight
805 KB
Volume
10
Category
Article
ISSN
0278-0070

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Investigation of deep levels in semi-ins
โœ T. Ikari; A. Fukuyama; Y. Akashi ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 111 KB

The temperature variation of the piezoelectric photoacoustic (PPA) signal intensity of semi-insulating (SI) GaAs from 20 to 150 K was measured. Four peaks at 50, 70, 110 and 125 K were observed in the PPA signal. From the theoretical analysis based on the rate equations of electrons in the conductio