✦ LIBER ✦

[IEEE 2013 Spanish Conference on Electron Devices (CDE) - Valladolid, Spain (2013.02.12-2013.02.14)] 2013 Spanish Conference on Electron Devices - An improved I-V model of 4H-SiC MESFETs incorporating substrate trapping, surface trapping and thermal effects

✍ Scribed by Rao, M. Hema Lata; Narasimha Murty, Neti V. L.

No coin nor oath required. For personal study only.

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