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Study of the equilibrium processes in the gas phase during silicon carbide sublimation

โœ Scribed by S.K. Lilov


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
397 KB
Volume
21
Category
Article
ISSN
0921-5107

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โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 330 KB ๐Ÿ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys