Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place
Thermodynamic analysis of the Gas Phase at the Dissociative Evaporation of Silicon Carbide
β Scribed by Dr. S. K. Lilov
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 394 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system SiβCβHβCl in the temperature interval 1000β3000 K. The equilibrium pressures of the components in the system SiβCβHβCl with taking account the formation of the condense
A recent report described the synthesis of a new polyazapolycyclic ring system, 2,4,6,8,10,12-hexabenzyl-2,4,6,8,10,12hexaazatetracyclo[5.5.0.05\*9.03~'1]dodecane (hexabenzylhexaazaisowurtzitane, HBIW)' by the condensation of benzylamine with glyoxal. Condensation reactions of phenylsubstituted benz