๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Investigation of the role of the crystal growth zone during silicon carbide crystal growth by the sublimation method

โœ Scribed by S.K. Lilov

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
338 KB
Volume
27
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Investigation of the role of crystal gro
Investigation of the role of crystal growth zone during silicon carbide growth by the sublimation method
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 330 KB ๐Ÿ‘ 1 views

The dependence of the growth rate of Sic crystals on the diameter of the graphite crystallization sleeve (GCS) forming the crystal growth zone has been investigated. It has been established that at a given crucible construction there is an exactly determined diameter of (GCS) for growing of Sic crys

Investigation of the thermal conditions
Investigation of the thermal conditions during silicon carbide crystal growth
โœ Dr. S. K. Lilov ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 322 KB ๐Ÿ‘ 1 views

In the present work an analysis of the thermal conditions during silicon carbide crystal growth from the vapour phase by the sublimation method is carried out. On the basis of the obtained results from the calculation of the temperature distribution along the length of the growing crystal it was dra