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Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

✍ Scribed by Nidhi, ; Palacios, T.; Chakraborty, A.; Keller, S.; Mishra, U.K.


Book ID
126077254
Publisher
IEEE
Year
2006
Tongue
English
Weight
103 KB
Volume
27
Category
Article
ISSN
0741-3106

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High temperature pulsed measurements of
✍ M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. GaquiΓ¨re πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 82 KB

## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote