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[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - Characterization and analysis of gate and drain low-frequency noise in AlGaN/GaN HEMTs

โœ Scribed by Hsu, S.S.H.; Valizadeh, P.; Pavlidis, D.; Moon, J.S.; Micovic, M.; Wong, D.; Hussain, T.


Book ID
120301138
Publisher
IEEE
Year
2002
Weight
486 KB
Category
Article
ISBN-13
9780780374782

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