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[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates

✍ Scribed by Weimann, N.G.; Manfra, M.J.; Hsu, J.W.P.; Baldwin, K.; Pfeiffer, L.N.; West, K.W.; Chu, S.N.G.; Lang, D.V.; Molnar, R.J.

Book ID: 115454403
Publisher: IEEE
Year: 2002
Weight: 556 KB
Volume: 0
Category: Article
ISBN-13: 9780780374782
DOI: 10.1109/lechpd.2002.1146740

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