At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity

✍ Scribed by David W. DiSanto; C. R. Bolognesi

• Book ID: 114618521
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 287 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.885663