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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

✍ Scribed by Koyama, M.; Cassé, M.; Coquand, R.; Barraud, S.; Vizioz, C.; Comboroure, C.; Perreau, P.; Maffini-Alvaro, V.; Tabone, C.; Tosti, L.; Barnola, S.; Delaye, V.; Aussenac, F.; Ghibaudo, G.; Iwai, H.; Reimbold, G.

Book ID: 123168290
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 870 KB
Volume: 84
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.02.024

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