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Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs
✍ Scribed by Ota, K.; Saitoh, M.; Tanaka, C.; Numata, T.
- Book ID
- 122332563
- Publisher
- Elsevier Science
- Year
- 2014
- Tongue
- English
- Weight
- 713 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0038-1101
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