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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires

✍ Scribed by Casse, M.; Barraud, S.; Le Royer, C.; Koyama, M.; Coquand, R.; Blachier, D.; Andrieu, F.; Ghibaudo, G.; Faynot, O.; Poiroux, T.; Reimbold, G.

Book ID: 120066925
Publisher: IEEE
Year: 2012
Weight: 502 KB
Category: Article
ISBN: 1467348708
DOI: 10.1109/IEDM.2012.6479119

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