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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs

✍ Scribed by Chern, Winston; Hashemi, Pouya; Teherani, James T.; Yu, Tao; Dong, Yuanwei; Xia, Guangrui; Antoniadis, Dimitri A.; Hoyt, Judy L.


Book ID
126862521
Publisher
IEEE
Year
2012
Weight
869 KB
Category
Article
ISBN
1467348708

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