[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

✍ Scribed by Cheng, K.; Khakifirooz, A.; Loubet, N.; Luning, S.; Nagumo, T.; Vinet, M.; Liu, Q.; Reznicek, A.; Adam, T.; Naczas, S.; Hashemi, P.; Kuss, J.; Li, J.; He, H.; Edge, L.; Gimbert, J.; Khare, P.; Zhu, Y.; Zhu, Z.; Madan, A.; Klymko, N.; Holmes, S.; Levin, T. M.; Hubbard, A.; Johnson, R.; Terrizzi, M.; Teehan, S.; Upham, A.; Pfeiffer, G.; Wu, T.; Inada, A.; Allibert, F.; Nguyen, B.-Y.; Grenouillet, L.; Le Tiec, Y.; Wacquez, R.; Kleemeier, W.; Sampson, R.; Dennard, R. H.; Ning, T. H.; Khare, M.; Shahidi, G.; Doris, B.

• Book ID: 120802279
• Publisher: IEEE
• Year: 2012
• Weight: 639 KB
• Category: Article
• ISBN: 1467348708
• DOI: 10.1109/IEDM.2012.6479063