✦ LIBER ✦

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors

✍ Scribed by Uematsu, Masashi; Itoh, Kohei M.; Mil'nikov, Gennady; Minari, Hideki; Mori, Nobuya

No coin nor oath required. For personal study only.

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