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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - The role of silicon, silicon carbide and gallium nitride in power electronics

✍ Scribed by Treu, M.; Vecino, E.; Pippan, M.; Haberlen, O.; Curatola, G.; Deboy, G.; Kutschak, M.; Kirchner, U.

No coin nor oath required. For personal study only.

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