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[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs

✍ Scribed by Koyama, M.; Casse, M.; Coquand, R.; Barraud, S.; Ghibaudo, G.; Iwai, H.; Reimbold, G.

Book ID: 125847642
Publisher: IEEE
Year: 2013
Weight: 539 KB
Category: Article
ISBN: 1479906492
DOI: 10.1109/ESSDERC.2013.6818878

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