Study of annealing induced redistribution of implanted Au in Si: Fluence dependence

✍ Scribed by G. Sahu; B. Joseph; H.P. Lenka

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 997 KB
• Volume: 268
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2010.09.018

✦ Synopsis

One hour 500 °C air annealing induced movement of implanted Au in Si have been studied for 32 keV Au implantation in Si, in the fluence range of 1 Â 10 15 -1 Â 10 17 ions cm À2 . Samples were characterized using Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The results indicate that, depending on the initial state of Au in the matrix, there is a clear difference in the diffusion behaviour of Au in Si. When Au is precipitated as gold-silicide nanoclusters inside the Si matrix, annealing is found to cause diffusion of Au into the bulk Si. Compared to this, for a random atomic distribution of Au in an amorphous Si matrix, annealing is found to result in out-diffusion of Au towards the surface.