To clarify the oxide growth mechanism on strained Si surfaces, the thermal oxidation reaction kinetics of an Si 1-x C x (x 0.1) alloy layer with a c(4 Γ 4) structure grown on Si(0 0 1) surfaces by carbonization with ethylene 636 β’ C was investigated using RHEED combined with AES. Upon staring the ox
β¦ LIBER β¦
Low energy O induced redistribution of nanosized Au inclusions in an oxide layer grown on Si(1 0 0)
β Scribed by B. Joseph; S. Mohapatra; B. Satpati; H.P. Lenka; P.K. Kuiri; D.P. Mahapatra
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 506 KB
- Volume
- 227
- Category
- Article
- ISSN
- 0168-583X
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