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Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(1 1 1) and Ge(1 1 1): Role of transverse momentum conservation

✍ Scribed by Y.Y. Illarionov; M.I. Vexler; S.M. Suturin; V.V. Fedorov; N.S. Sokolov; K. Tsutsui; K. Takahashi

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 793 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.03.079

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Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(1&#xa0;1&#xa0;1) and Ge(1&#xa0;1&#xa0;1): Role of transverse momentum conservation

Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(1 1 1) and Ge(1 1 1): Role of transverse momentum conservation