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Studies of ultra shallow n+–p junctions formed by low-energy As-implantation

✍ Scribed by D. Girginoudi; N. Georgoulas; A. Thanailakis; E.K. Polychroniadis

Book ID
108215105
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
184 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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## Abstract The primary beam energy and species (Cs^+^, Ar^+^) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV ^11^B^+^ implant. Cs^+^ profiles (1 keV, 30