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Ultra-low energy SIMS study of ultra-shallow boron implants in HPHT diamond

✍ Scribed by Guzmán de la Mata, B. ;Dowsett, M. G. ;Palitsin, V.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
186 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The primary beam energy and species (Cs^+^, Ar^+^) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV ^11^B^+^ implant. Cs^+^ profiles (1 keV, 30°) appear to be seriously distorted by atomic mixing and recoil implantation due to the high mass of the probe. Ar^+^ profiles (300 eV–1 keV, 0°) are less distorted, but both Cs^+^ and Ar^+^ tend to produce significant tails. The Ar^+^ SIMS profiles produce implants which appear to be shallower than the TRIM simulation. We show that profiling using Ar^+^ with energies between 0.3 and 1 keV can be used to extrapolate a profile to zero beam energy. The extrapolated data indicate a centroid between 5 and 10 nm from the surface, whereas TRIM predicts 11 nm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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