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Study of ultra-shallow p+n junctions formed by excimer laser annealing

✍ Scribed by Miin-Horng Juang; C.N. Lu; S.L. Jang; H.C. Cheng

Book ID
113783612
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
537 KB
Volume
123
Category
Article
ISSN
0254-0584

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## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser ann