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Characterization of ultra-shallow p+-n junction diodes fabricated by 500-eV boron-ion implantation

โœ Scribed by Hong, S.N.; Ruggles, G.A.; Wortman, J.J.; Myers, E.R.; Hren, J.J.


Book ID
114537100
Publisher
IEEE
Year
1991
Tongue
English
Weight
569 KB
Volume
38
Category
Article
ISSN
0018-9383

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