Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon: E. Landi and S. Solmi. Solid-St. Electron.29(11), 1181 (1986)

• Publisher: Elsevier Science
• Year: 1987
• Tongue: English
• Weight: 135 KB
• Volume: 27
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(87)90158-2