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Studies of the near-surface layers of silicon crystals implanted with fast ions

✍ Scribed by D. Żymierska; D. Klinger; J. Auleytner; T. Czosnyka; L. Datsenko

Book ID
114170459
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
483 KB
Volume
146
Category
Article
ISSN
0168-583X

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Defect structure of silicon crystals implanted with H2+ions
✍ Shalimov, Artem ;Shcherbachev, Kirill D. ;Bak-Misiuk, Jadwiga ;Misiuk, Andrzej 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 517 KB

## Abstract Si(001) single crystal was implanted with hydrogen ions with energy 135 keV and dose 5 × 10^16^ cm^–2^. After implantation, Si:H samples were annealed at 450 and 650 °C under atmospheric and enhanced hydrostatic pressure (1.1 GPa). Defect structure of as‐implanted and processed Si:H was