Studies of grain size effects in rf sputtered CdS thin films
β Scribed by Tsai, C. T.; Chuu, D. S.; Chen, G. L.; Yang, S. L.
- Book ID
- 121236844
- Publisher
- American Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 582 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.362645
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π SIMILAR VOLUMES
The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul
CdS thin films were prepared using rf planar magnetron sputtering in Ar atmosphere. Different deposition temperatures between 150 and 250 C and different rf powers between 30 and 130 W were used. The films had hexagonal structure with crystallites oriented in the h100i direction. The increase of dep