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Structure of nanoindentations in heavily n- and p-doped (0 0 1) GaAs

✍ Scribed by E. Le Bourhis; G. Patriarche


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
933 KB
Volume
56
Category
Article
ISSN
1359-6454

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Electrochemical behavior of hemin on p-GaAs(1 0 0) electrodes was examined by cyclic voltammetry (CV) and impedance spectroscopy (EIS) in phosphate buffer solutions (PBS) at pH 7.45. CV investigations in 0.6 mM hemin in PBS revealed a pair of reversible peaks at -0.44 and -0.32 V vs. SCE resulting i