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Redox behavior of hemin at p-GaAs(1 0 0) electrode

✍ Scribed by A.M. Toader; E. Volanschi; M.F. Lazarescu; V. Lazarescu

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 439 KB
Volume: 56
Category: Article
ISSN: 0013-4686
DOI: 10.1016/j.electacta.2010.09.083

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✦ Synopsis

Electrochemical behavior of hemin on p-GaAs(1 0 0) electrodes was examined by cyclic voltammetry (CV) and impedance spectroscopy (EIS) in phosphate buffer solutions (PBS) at pH 7.45. CV investigations in 0.6 mM hemin in PBS revealed a pair of reversible peaks at -0.44 and -0.32 V vs. SCE resulting in stable adsorbed species. EIS spectra analysis pointed out that these adsorbed species bring significant changes in the semiconductor surface state population and the potential drop distribution between the semiconductor space charge region and the Helmholtz layer.

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Redox behavior of hemin at p-GaAs(1&#xa0;0&#xa0;0) electrode

✦ Synopsis

Redox behavior of hemin at p-GaAs(1 0 0) electrode