We study inhomogeneous doping effects on the confinement properties of modulationdoped single nonabrupt GaAs/Al x Ga 1-x As quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled SchrΓΆdinger (with a position dependent kinetic ene
Spin relaxation in n-modulation doped GaAs/AlGaAs (1 1 0) quantum wells
β Scribed by T Adachi; Y Ohno; F Matsukura; H Ohno
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 144 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1386-9477
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