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Structurally perfect silicon layers produced on sapphire by oxygen ion implantation

✍ Scribed by V. M. Vorotyntsev; E. L. Shobolov; V. A. Gerasimov


Book ID
110167066
Publisher
SP MAIK Nauka/Interperiodica
Year
2011
Tongue
English
Weight
169 KB
Volume
47
Category
Article
ISSN
0020-1685

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The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing