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Structural and surface topography analysis of AlN single crystals grown on 6H–SiC substrates

✍ Scribed by R.R. Sumathi; R.U. Barz; T. Straubinger; P. Gille


Book ID
116630120
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
681 KB
Volume
360
Category
Article
ISSN
0022-0248

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Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show