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Capacitance–Voltage Characterization of AlN MIS Structures Grown on 6H-SiC(0001) Substrates by MOCVD

✍ Scribed by W. Hageman; A. Rys; J. Schmitt; J.H. Edgar; B. Liu; D.D. Koleske

Book ID
104556422
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
80 KB
Volume
0
Category
Article
ISSN
1862-6351

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