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Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates

✍ Scribed by Byeung C. Kim; Michael A. Capano


Book ID
107455031
Publisher
Springer US
Year
2007
Tongue
English
Weight
285 KB
Volume
37
Category
Article
ISSN
0361-5235

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The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using Ε½ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a