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Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

✍ Scribed by Rolando Bantaculo; Eiji Saitoh; Yu Miyamoto; Hiroyuki Handa; Maki Suemitsu

Book ID: 113937137
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 571 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.06.090

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