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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

✍ Scribed by I. V. Grekhov; L. S. Kostina; T. S. Argunova; E. I. Belyakova; A. V. Rozkov; N. M. Shmidt; Sh. A. Yusupova; J. H. Je

Book ID
111444709
Publisher
Springer
Year
2010
Tongue
English
Weight
427 KB
Volume
44
Category
Article
ISSN
1063-7826

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✍ I. Radu; C. Himcinschi; R. Singh; M. Reiche; U. GΓΆsele; S.H. Christiansen; D. Bu πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 489 KB

Fabrication of strained silicon on insulator (sSOI) substrates by wafer bonding and layer splitting is described in this paper. The sSi layer of 20 nm thickness is obtained on an 8 in. virtual substrate that consists of a plastically relaxed SiGe layer grown epitaxially on Si(0 0 1) by chemical vapo