Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique

✍ Scribed by Haigui Yang; Dong Wang; Hiroshi Nakashima

• Book ID: 113937363
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 678 KB
• Volume: 520
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2011.10.078