Structural and electrical properties of poly-SiGe thin films prepared by reactive thermal CVD
β Scribed by K. Shiota; D. Inoue; K. Minami; J. Hanna
- Book ID
- 117149056
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 451 KB
- Volume
- 227-230
- Category
- Article
- ISSN
- 0022-3093
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp
## Abstract In this work, the mechanisms of reactive thermal CVD are discussed and the influences of various deposition parameters on crystallinity, composition, uniformity and reproducibility are clarified. Based on optimization of deposition parameters, we obtained deviceβgrade polycrystalline Si
Thin films of TiO 2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO 2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO 2 thin films.