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Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD

✍ Scribed by J.J. Zhang; K. Shimizu; Y. Zhao; J.M. Xue; X.H. Geng; S.Z. Xiong; C.Y. Wu; J. Hanna

Book ID
116669092
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
327 KB
Volume
352
Category
Article
ISSN
0022-3093

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✍ Zhang, Jianjun ;Shimizu, Kousaku ;Zhao, Ying ;Geng, Xinhua ;Hanna, Jun-ichi πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 851 KB

## Abstract In this work, the mechanisms of reactive thermal CVD are discussed and the influences of various deposition parameters on crystallinity, composition, uniformity and reproducibility are clarified. Based on optimization of deposition parameters, we obtained device‐grade polycrystalline Si