Silicon-based narrow-bandgap thin-film semiconductor materials: polycrystalline SiGe prepared by reactive thermal CVD
✍ Scribed by Zhang, Jianjun ;Shimizu, Kousaku ;Zhao, Ying ;Geng, Xinhua ;Hanna, Jun-ichi
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 851 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
In this work, the mechanisms of reactive thermal CVD are discussed and the influences of various deposition parameters on crystallinity, composition, uniformity and reproducibility are clarified. Based on optimization of deposition parameters, we obtained device‐grade polycrystalline SiGe (poly‐SiGe) thin films with high crystallinity of >95%, high uniformity of >80% and high reproducibility of >85% at 450 °C. The results presented in this paper proved that polycrystalline SiGe films deposited by reactive thermal CVD are suitable for device application. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)