The structural and electrical properties of TiO2 thin films prepared by thermal oxidation

✍ Scribed by P. Chowdhury; Harish C. Barshilia; N. Selvakumar; B. Deepthi; K.S. Rajam; Ayan Roy Chaudhuri; S.B. Krupanidhi

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 515 KB
• Volume: 403
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2008.06.022

✦ Synopsis

Thin films of TiO 2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO 2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO 2 thin films. Metal-oxide-semiconductor capacitors with Al as the top electrode were fabricated to study the electrical properties of the TiO 2 films. The current conduction mechanisms in thermally grown TiO 2 films were observed to follow the space charge-limited current mechanism followed by a Schottky emission process both at and above room temperature. Three orders of magnitude of reduction in current density were observed for thermally grown samples while measured the I-V characteristics at 77 K and Fowler-Nordheim (F-N) tunneling was found to be a dominant conduction mechanism at higher biasing voltages.