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Stress induced degradation features of very thin gate oxides

✍ Scribed by A Scarpa; G Ghibaudo; G Ghidini; G Pananakakis; A Paccagnella

Book ID
108362216
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
230 KB
Volume
38
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

Stress induced leakage current in ultra-
Stress induced leakage current in ultra-thin gate oxides after constant current stress
✍ A. Scarpa; G. Ghibaudo; G. Ghidini; G. Pananakakis; A. Paccagnella πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 216 KB

Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati