✦ LIBER ✦

Atomic hydrogen-induced degradation of thin SiO2 gate oxides

✍ Scribed by E. Cartier; D.A. Buchanan; J.H. Stathis; D.J. DiMaria

Book ID: 115990366
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 276 KB
Volume: 187
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(95)00143-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of the hot-electron-ind

Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides

✍ E Cartier 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 382 KB

Stress induced degradation features of v

Stress induced degradation features of very thin gate oxides

✍ A Scarpa; G Ghibaudo; G Ghidini; G Pananakakis; A Paccagnella 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 230 KB

Reliability degradation of thin HfO2/SiO

Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

✍ E. Efthymiou; S. Bernardini; J.F. Zhang; S.N. Volkos; B. Hamilton; A.R. Peaker 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 243 KB

Modeling the breakdown and breakdown sta

Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides

✍ Jordi Suñé; Ernest Wu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 101 KB

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture

Failure physics of ultra-thin SiO 2 gate

Failure physics of ultra-thin SiO 2 gate oxides near their scaling limit

✍ Suñé, J; Nafría, M; Miranda, E; Oriols, X; Rodríguez, R; Aymerich, X 📂 Article 📅 2000 🏛 Institute of Physics 🌐 English ⚖ 158 KB

Atomic hydrogen-induced degradation of t

Atomic hydrogen-induced degradation of the SiSiO2 structure

✍ E. Cartier; J.H. Stathis 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 596 KB