## Abstract The strain in __a__ βplane GaN layers of different thickness grown on __r__ βplane sapphire substrates by hydride vapor phase epitaxy was studied by Xβray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore,
β¦ LIBER β¦
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
β Scribed by Roder, C.; Einfeldt, S.; Figge, S.; Paskova, T.; Hommel, D.; Paskov, P. P.; Monemar, B.; Behn, U.; Haskell, B. A.; Fini, P. T.; Nakamura, S.
- Book ID
- 120054398
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 652 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0021-8979
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