## Abstract The strain in __a__ βplane GaN layers of different thickness grown on __r__ βplane sapphire substrates by hydride vapor phase epitaxy was studied by Xβray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore,
β¦ LIBER β¦
In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
β Scribed by T. Paskova; V. Darakchieva; E. Valcheva; P.P. Paskov; B. Monemar; M. Heuken
- Book ID
- 108341976
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 338 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0022-0248
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