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Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates

โœ Scribed by Baik, Kwang Hyeon; Seo, Yong Gon; Kim, Jaebum; Hwang, Sung-Min; Lim, Wantae; Chang, C Y; Pearton, S J; Ren, F; Jang, Soohwan


Book ID
115486942
Publisher
Institute of Physics
Year
2010
Tongue
English
Weight
704 KB
Volume
43
Category
Article
ISSN
0022-3727

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Growth temperature induced effects in no
โœ Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Basanta Roul; Mahesh Kumar; P. Misr ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 633 KB

Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ร€ 2 0) orientation of the GaN epilaye