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Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon Source and Drain Stressors With High Carbon Content

✍ Scribed by Tsung-Yang Liow; Kian-Ming Tan; Weeks, D.; Rinus Lee; Ming Zhu; Keat-Mun Hoe; Chih-Hang Tung; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S.; Balasubramanian, N.; Yee-Chia Yeo

Book ID: 114619528
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 595 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.928025

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