✦ LIBER ✦
The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors
✍ Scribed by Lee, R.; Koh, A.T.-Y.; Kian-Ming Tan; Tsung-Yang Liow; Dong Zhi Chi; Yee-Chia Yeo
- Book ID
- 111919731
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 703 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.