Contact Technology for Strained nFinFETs With Silicon–Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation

✍ Scribed by Shao-Ming Koh; Samudra, G.S.; Yee-Chia Yeo

• Book ID: 114620904
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 964 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2012.2185799